Thin film deposition, etching and other fabrication services

Our company's foundry offers to our customers a strong process know-how, a wide range of targets in stock (approximately 120 different materials), various thin film deposition (including sputtering, evaporation, CVD) and etching processes (dry and wet etching). We respond to customers` requests for small-lot production while at the same time reducing the development costs and speeding up the prototyping processes for semiconductor, FPD, MEMS, solar and other applications.

 

We are pleased to receive requests for complete process services or parts of them

We can find a timely and effective solution to your problems

• When you don't have the needed equipment available.
• When you need data regarding a certain process or you need to make a sample,etc.
• When you do not own the needed equipment.
• When you do not own the materials needed for your thin film processing.
• When you want to order samples according to your design instead of manufacture them internally.
• When you want to outsource a complete thin-film fabrication process (or just a part of it).

Process capability list

We meet your fabrication requests using our decades-long expertise and several fabrication processes.

Thin film

Type	Methods, Devices	Remarks	Substrate size
Insulation layer formation	Thermal oxidation	≦10µm	Φ2" to Φ300
	AP-CVD	SiO2, PSG、NSG etc.	Φ4", Φ5"
	LP-CVD	Poly Si etc.	Φ2" to Φ4", Φ6"
	PE-CVD	SiO2, SiN, a-Si, etc.	Φ2" to Φ8"
Metal and insulation layer formation	Sputtering (PVD)	Metal, Alloy, Oxide, Nitride, Special material etc.	Φ2" to Φ450、≦650 x 950
	Evaporation	Metal, Alloy, Oxide, Nitride, Special material etc.	Φ2" to Φ300, ≦300 x 360
	Electro / Electroless Plating	Electro plating: Ni, Cu, Au, SnAg Electroless plating:Ni, Cu, Au	≦Φ8", Square

Patterning

Type	Methods, Devices	Remarks	Substrate size
Photolithography Process (Resist coating, Exposure, Development)	Spin Coat	Positive resist, Negative resist	Φ2" to Φ8"
	Contact Aligner	Capability: >3µm	Φ2" to Φ8"
	Double Side Aligner (g-line)	Capability: >1µm	Φ4"
	Stepper (i-line)	Capability: >0.5µm	Φ4", Φ6"
	Nanoimprinting	Imprinted resist (nano order)	Ask for detail
	E beam lithography	Capability: >50nm	≦Φ6"
Lift off	Lift off	Capability: >5µm	Φ2" to Φ8"

 

Etching

Type	Methods, Devices	Remarks	Substrate size
Dry Etching	Parallel plate RIE	Si etching, Quartz etching	Φ2" to Φ8"
	ICP-RIE	Si etching, Quartz etching	Φ4", Φ6"
	Si Deep-RIE	Si (Through-Hole)	Φ2" to Φ6"
	Sacrifical layer etching	Si, SiO2	Φ2" to Φ6"
	Metal etching	Al, Al system	Φ2" to Φ４"
Wet Etching	TMAH, KOH	Choose suitable	Φ2" to Φ8"
	HF		Φ2" to Φ8"
	Various metal layer etching		Φ2" to Φ8"

Ion Implant

Type	Methods, Devices	Remarks	Substrate size
Ion Implant	Mid current Ion Implant High energy Ion Implant	Possible to dope using 60+ elements	Φ3" to Φ6"
Anneal	High energy high speed annealing	Heat temperature MAX 1800℃	≦Φ8"

 

Bonding

Type	Methods, Devices	Remarks	Substrate size
Wafer bonding	Anodic bonding	Bond Glass and Si	≦Φ8"
	Surface activated bonding	Possible to bond different materials together	Ask for detail

Polishing

Type	Methods, Devices	Remarks	Substrate size
Wafer bonding	CMP	Metal: Au, Pt, Cu etc. Oxide: TEOS, SiO2 etc.	Φ2" to Φ300, Square

Analysis

Type	Methods, Devices	Remarks	Substrate size
Surface analysis	SIMS, ESCA, TEM etc.	Various contract analysis services	Ask for detail
Microscope observation of shapes in very small areas
Thermoanalysis