Ion implantation

Ion implantation Services: Applicable to various substrates such as Si, SiC, GaN and Ga₃O₃ etc.,

• Small chip to φ12"substrate 60 or more types of ions species can be implanted
• Room temperature to high-temperature implantation at 600°C required for power devices
• Services from R&D to mass production
• High-temperature and high-speed annealing up to 1800°C.
• Activation processing after ion implantation required for power devices is also possible
• Simulation data can be provided before actual processing. We also provide shape observation after injection, analysis of TEM, SIMS, RBS, etc.

Available ion species

Range of ion implantation equipment

Ion implanter specifications

Please let us know, the required substrate size for ion implantation.

Medium current ion implanter

200 KeV (B)

Injection energy	10 to 180 KeV
Main ion species	Refer to the ion species table above
Loading method	Single wafer automatic transfer
Setting	Injection angle: 0-60 ° / Rotation angle: 0-359 ° (Rotary injection and step injection are possible)
Substrate size	～ Φ6"
Temperature	Room temperature~600°C

200 KeV (C)

Injection energy	10 to 190 KeV
Main ion species	Refer to the ion species table above
Loading method	Single wafer manual transfer
Setting	Injection angle: 0 or 7 ° (fixed) / Rotation angle: 0-359 °injection are possible)
Substrate size	～ Φ6 "(High temperature up to Φ3 ")
Temperature	Room temperature~600°C

400 KeV

Injection energy	10 to 350 KeV (Acceleration up to 700 KeV by using divalent ions)
Main ion species	Refer to the ion species table above
Loading method	Single wafer automatic transfer
Setting	Injection angle: 0-60 ° / rotation angle: 0-359 °
Substrate size	～ Φ6"
Temperature	Room temperature~600°C

High energy ion implanter

8 MeV

Injection energy	1 to 8 MeV
Main ion species	Al, B, C, P, N
Loading method	Single wafer manual transfer
Setting	Injection angle: 0 or 7 ° (fixed) / Rotation angle: 0-359 °
Substrate size	～ Φ6"
Temperature	Room temperature

12-inch Ion implantation equipment

Injection energy	5 to 750 KeV (trivalent ions)
Main ion species	B, P (please contact us for other species)
Loading method	Single wafer manual transfer
Setting	Injection angle: 0 or 60° / Rotation angle: 0-359 °
Substrate size	Φ12 "
Temperature	Room temperature

High-temperature and high-speed annealing equipment (for activation annealing)

Heating temperature	~ 1800℃ (up to maximum heating temperature, about 2 minutes)
Atmosphere	Ar or N2 gas flow
Substrate type	Si, SiC, GaN, etc.
Substrate size	~ Φ6 "(small sample is also available)