Next generation power device wafer level prototyping services

Prototyping can be done with small number of substrates say, single wafer and also for a single process (Also flexible to other smaller size substrates and chips)

Features

• The substrate material can be Si, SiC, Ga₂O₃, diamond, etc.
• We are one-stop solution for all the processes (front electrode-P/N ion implantation-back electrode formation) for various substrates under optimal conditions.

Thin Film Deposition Process
Sputtering	In addition to base metals and precious metals 120 types of materials including nitrides can be selected for front and back electrodes.
ALD/ECR Plasma	Depositing thin gate insulators such as HfO2 , Al2O3 , SiO2 , TiO2 、AlON, SiON for power semiconductor devices is possible.
CVD	CVD processes like PE-CVD, LP-CVD are possible
High temperature・High Energy Ion Implantation Process / Activated Annealing Process
Ion Implantation / RTA	Capable of ion Implantation and activated annealing with optimized conditions for power semiconductor devices. Capable of handling wafer of sizes up to 6 inch dia. (chip size processing is also possible)
Patterning Process
Photolithography	Aligner, stepper, E-beam Lithography can be performed based on specification
Etching	Dry (Trench processing is possible for SiC , GaN substrates), Wet
Key Process
MO-CVD	GaN and various other kinds are possible
CMP	Slurry advice for CMP processes of GaN, SiC, etc. from substrate level to device
Wafer Bonding	Bonding of SiC, GaN, etc. is possible
Dicing	Dicing using special blades for SiC, GaN is possible

Beside SiC and GaN, processing on other substrates like Ga₂O₃, Diamond, etc. is possible