Plasma resistance evaluation

Evaluation of material’s plasma resistance using dry etching equipment

We can evaluate the plasma resistance and etching rate of new materials such as ceramics (alumina, yttria, etc.) and resins, by exposing them to plasma in the dry etching equipment.

Gases that can be used SF6, CHF3, CF4, C4F8, Ar, O2, Cl2, XeF2

Evaluation data example (Comparison of etching RATE by material and gas type)

Plasma resistance evaluation method

The area that is not be exposed by plasma is masked.
Optimum masking method is considered depending on the condition of the sample to be charged.

After etching, remove the mask and measure the etching amount of plasma-etched part and untreated part with a stylus profilometer.