Plasma resistance evaluation
Evaluation of material’s plasma resistance using dry etching equipment
Plasma processing using dry etching equipment can create various environments depending on the used gas type.
Available to simulate the environment in which new materials will be used and evaluate their plasma resistance.
Sample preparation know-how is also important for obtaining stable and reproducible data. Please feel free to contact us at the consideration stage before sample production.
| Gases that can be used | SF6, CHF3, CF4, C4F8, Ar, O2, Cl2 |
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Evaluation data example (Comparison of etching RATE by material and gas type)
Substrate placement example
Arrange the substrate in a ring on the Φ220mm stage to suppress the influence of etching distribution.
The stage has a cooling mechanism that is fixed at 20℃.
Plasma resistance evaluation method
Apply making to part of the material so that it is not exposed to plasma. Optimal masking method is chosen depending on the condition of the sample piece.
After etching, remove the mask and measure the etching amount of plasma-etched part and untreated part with a stylus profilometer.
Foreign matter count during plasma resistance evaluation (optional)
Depending on the material added to improve resistance, it may cause of particles.
When evaluating plasma resistance, we can check the particle state before and after process.
