CMP processing

CMP processing services:for MEMS/TSV

Chemical mechanical polishing (CMP) makes use of the chemical reaction of the slurry with the film while polishing the surface. This way the surface roughness can be controlled on an atomic scale. By tailoring the slurry preferential polishing of one or more of the elements or compounds simultaneously present on the surface is possible. It is mainly used to improve the interface between layer stacks and to improve the surface roughness and unevenness (e.g. after ion implantation).

CMP has become an indispensable technology with wide ranging applications, for example in polishing Si power devices, before integration of MEMS devices and hard to cut materials such as SiC or GaN.

CMP processing working environment

CMP capabilities

Metallic materials Au, Ag, Rh, Ru, Cu, Co, Co, Pd, Al, W, Ta, TaN, Ti, TiN, Ni, Ni-P, Ni-Fe, Pd, Cr, etc.
Insulating materials SiO2, TEOS, various Polymer, Al2O3 , etc.
Substrate materials Si, SiC, GaN, Al2O3, Al2O3 compounds, Polymer, Glass, LiTaO3, DLC, GaP, GaAs, InP, etc.

Substrate size: chip size ≦300mm (φ12")
*Rectangular substrates also available

Examples of achievable surface roughness

Examples of achievable surface roughness

Conducting material

Au 0.163nm
Cu 0.245nm
Al 0.172nm
Ta 0.102nm

Insulating film

SiO2 0.0752nm
SiN 0.0824nm

Substrate material

Si 0.0674nm
Glass 0.12nm
SiC 0.131nm


CMP processing example


We can provide not only highly specialized CMP processes
but also related processes and thus provide a total solution for your needs.



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製品分類1 Deposition, Photolithography, Etching|CMP processing
製品分類2 CMP
サムネイル画像 CMP processing services