CMP processing
CMP processing services：for MEMS/TSV
Chemical mechanical polishing (CMP) makes use of the chemical reaction of the slurry with the film while polishing the surface. This way the surface roughness can be controlled on an atomic scale. By tailoring the slurry preferential polishing of one or more of the elements or compounds simultaneously present on the surface is possible. It is mainly used to improve the interface between layer stacks and to improve the surface roughness and unevenness (e.g. after ion implantation).
CMP has become an indispensable technology with wide ranging applications, for example in polishing Si power devices, before integration of MEMS devices and hard to cut materials such as SiC or GaN.
CMP capabilities
| Metallic materials | Au, Ag, Rh, Ru, Cu, Co, Co, Pd, Al, W, Ta, TaN, Ti, TiN, Ni, Ni-P, Ni-Fe, Pd, Cr, etc. |
|---|---|
| Insulating materials | SiO2, TEOS, various Polymer, Al2O3 , etc. |
| Substrate materials | Si, SiC, GaN, Al2O3, Al2O3 compounds, Polymer, Glass, LiTaO3, DLC, GaP, GaAs, InP, etc. |
Substrate size: chip size ≦300mm (φ12")
*Rectangular substrates also available
Examples of achievable surface roughness
Conducting material
| Ra | |
|---|---|
| Au | 0.163nm |
| Cu | 0.245nm |
| Al | 0.172nm |
| Ta | 0.102nm |
Insulating film
| Ra | |
|---|---|
| SiO2 | 0.0752nm |
| SiN | 0.0824nm |
Substrate material
| Ra | |
|---|---|
| Si | 0.0674nm |
| Glass | 0.12nm |
| SiC | 0.131nm |
CMP processing example
We can provide not only highly specialized CMP processes
but also related processes and thus provide a total solution for your needs.
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| 製品分類1 | Deposition, Photolithography, Etching|CMP processing |
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| 製品分類2 | CMP |
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