R&D Nano-meter-level exposure system "PhableR 100"


PhableR 100 system is one of exposure system which achieve half pitch of 150nm patterning upon periodic structure utilizing Talbot effect. this technology is very convenient for the customer who is developing periodic device and also it is very reasonable price to supply this machine. Additionally in the case of choosing DUV light source the half pitch of 75nm patterning is realized.

Nano-meter-level patterning technology

Nano meter shows length unit of 1E-9 meter. Current fields of electronics should use the fine technology in the range of Nano meters then the word of 'Nano technology' is commonly used on semiconductor field. Some methods of electron beam, lithography, nanoimprinting and self-organization, have reached practical production run, however sill have some problems, such as position accuracy, repeatability, cost, processing time and so on, to reach extremely fine patterning.

Electron beam lithography VS PHABLE

  Electron beam lithography PhableR 100
Principle Electron beam scanning Talbot effect
Available pattern Arbitrary 1D and 2D patterns
Resolution Several nm to several tens nm 75nm(L/S)
Environment Necessary of high vacuum, high voltage, anti-magnetic field and anti-vibration flied
Like a mask aligner
Processing time Several hours to several tens hours Around a wafer/minute
Cost Several hudreds million JPY to several billions JPY Several tens million JPY

Simple and Reasonable R&D Nano-meter-level exposure system with high resolution equivalent to DUV 'PhableR 100'

Feature of R&D Nano-meter-level exposure system "PhableR 100"

PhableR 100
  • High resolution below 300nm pitch
    • The PhableR 100 system is based on the proprietary PHABLE (short for Photonics Enabler) photolithographic technology developed by Eulitha AG, which makes it possible to print high-resolution periodic structures in a non-contact, proximity photolithography system.
    • The resolution obtained with the PhableR 100 is essentially the same as that of a DUV projection lithography system, but without the complex and expensive optics and mechanics.
    • For example, linear gratings with a half-pitch of 150nm can be printed with high uniformity with the new system, although maximum resolution of conventional mask aligner is about 1-2 um.
    • Linear or curved gratings, 2D photonic-crystal type patterns with hexagonal or square symmetry can be printed with feature periods less than 300nm.
    • The PhableR 100 system can expose substrates with diameters up to 100mm using industry standard chrome-on-glass or phase-shifting masks.
    • Full-field exposure
    • The mask and the substrate are loaded manually onto the system and the exposure process is controlled by an onboard computer.
  • Non-contact: protects masks from damage and contamination
    • The system may also be used like a standard mask-aligner in either proximity or contact mode to print micron-scale structures.
  • Practically unlimited depth-of-focus
    • As an added advantage, the practically unlimited depth of focus of the image formed by the PhableR 100 system means that the high-resolution patterns can be printed with high uniformity even onto non-flat substrates, which are commonly encountered in photonics applications.
  • Commercially available photoresists and material
    • The PhableR 100 system can expose substrates with diameters up to 100mm using industry standard chrome-on-glass or phase-shifting masks
    • Standard i-line photoresists, both positive and negative tone, which are available from common vendors
  • Suitable for non-flat substrates (e.g. epi-wafers)
  • High uniformity -Overlay alignment capability
  • Frequency multiplication
  • Targeted applications include research and development projects in photonics, fabrication of gratings for optical diffraction and spectroscopy, light extraction patterns on LEDs, patterned sapphire substrates and color filters.
  • in the case of choosing DUV light source the half grating pitch of 75nm is realized.

Specifications of fabricated pattern by Phabler 100

Resolution 150nm half pitch ( linear grating) *75nm half pitch in the case of DUV
Substrate size <100mm diameter
Mask format 5 inch
Illumination uniformity <3%
Pitch range 300nm to 3µm (>150nm in the case of DUV light source)
Resist thickness Around 1µm
Operation No-auto-loading, auto-exposure
Control Touch panel

Phable technology

In the case that diffraction grating is placed under coherent illumination, intensity distribution with the same pitch as the grating is formed on the specified distance from grating. This is well known as Talbot effect. Applying Talbot effect to actual exposure work was not feasible by the problem as alignment, position, topography and thinning resist in past. Phable technology developed by Eulitha is the proprietary technique, which is capable to adapt to exposure system, to integrate intensity distribution during one period caused by Talbot effect, removing cross-order interference then solving conventional problems of alignment, position, topography and use of thick resist, and achieving frequency multiplied, achromatic and limited space interference, highly collimated illumination compared to mask aligner. This is break-through technology adaptable to exposure system.


Nano-level patterning equipment, such as EB litho, DUV and EUV have a problems to be installed, huge investment to machine purchase, long running cost and so on. ‘PhableR 100’ is simple and Reasonable R&D Nano-meter-level exposure system which achieve high resolution equivalent to DUV.

Reference data



  • テーブルの行列は変更しないでください。
  • 分類が複数ある場合は、| ←半角の縦棒で区切って連続で入力してください。
製品分類1 Microfabrication Tools
製品分類2 Nano-pattern exposure system
サムネイル画像 R&D Nano-meter-level exposure system PhableR 100