Nano-level photolithography system "Phable" series
Phable is a unique low-cost exposure tool enabling expose fine patterns with half pitch (Linear gratings) as periodic structures by DTL technology which applies Talbot effect.
(DTL: Displacement Talbot Lithography)
It is possible to introduce Phable system at a reasonable price to customers who are developing devices with periodicity at the resolution of E-beam drawing.
For Line and space patterns, 125nm (half pitch) is possible with UV light source and 65nm is possible with DUV light source.
In addition, line width and hole diameter can be adjusted without changing the mask design.
Phable technology
In the case that diffraction grating is placed under coherent illumination, intensity distribution with the same pitch as the grating is formed on the specified distance from grating. This is well known as Talbot effect.
Applying Talbot effect to actual exposure work was not feasible by the problem as alignment, position, topography and thinning resist in past.
Phable technology developed by Eulitha is the proprietary technique, which is capable to adapt to exposure system, to integrate intensity distribution during one period caused by Talbot effect, removing cross-order interference then solving conventional problems of alignment, position, topography and use of thick resist, and achieving frequency multiplied, achromatic and limited space interference, highly collimated illumination compared to mask aligner. This is break-through technology adaptable to exposure system.
Principle of Talbot Effect
Principle of DTL
PHABLE vs. other lithography technology
| Phable | Projection | EB | NIL | |
|---|---|---|---|---|
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| Resolution | 60nm | 50nm | 10nm | Depending on template |
| Throughput |
~40wph
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~100wph | ~1wph | ~20wph |
| Yield / Quality | High | High | High | Low |
| Type of patterns | Periodic | any | any | any |
| Non-flat substrate | OK | NOK | NOK | NOK |
| Mask life | Long | Long | Long (No mask) | Short |
| Cost | Low | High | High | Mid |
Simple and Reasonable Nano-level photolithography system 'Phable’ series realizing high resolution equivalent to DUV
- Achieves the same resolution as a DUV projection exposure system without the need for complex and expensive optical systems or mechanical structures.
- While typical mask aligners only have a resolution of around 2um~, Phable can expose linear gratings with half pitches of 65nm (DUV) and 125nm (UV) with high uniformity.
- Deep depth of focus (DOF) =>Allows exposure to curved surfaces such as lenses and non-flat substrates (e.g. epitaxial wafers).
- Common photoresists and materials can be used. Standard i-line photoresists (positive/negative) can be used.
- Compatible with industry standard chrome and phase shift masks.
- Highly uniform overlay alignment capability
- Non-contact exposure: Protects photomasks from damage and contamination.
- When used in proximity or contact mode, it can also be used as a normal mask aligner, making it possible to transfer submicron-scale structures.
- Deep depth of focus (DOF) =>Allows exposure to curved surfaces such as lenses and non-flat substrates (e.g. epitaxial wafers).
- It is possible to pattern on substrates with half pitch of a mask (for linear gratings). (e.g. in order to make 200nm pitch L/S on a substrate, 400nm pitch mask design is sufficient.)
- The line width and hole diameter can be fine-tuned without changing the mask design.
- Applications: photonics, the production of diffraction gratings for optical diffraction and spectroscopy, semiconductor lasers (DFB, VCSEL, etc.), development of resist materials, PSS (Patterned Sapphire Substrates), research and development of color filters, etc.
AR
HUD
Laser (DFB, VCSEL)
Optical parts, lens
Examples of periodic patterns by Phable
PhableRTM for R&D, small volume production
| Resolution | UV light source : 125 nm half pitch (linear gratings) DUV light source : 65 nm half pitch (linear gratings) |
|---|---|
| Substrate size | φ100 mm, φ150 mm （φ200 mm on request） |
| Mask format | 5”□、6”□ |
| Beam size | 105mm, 155mm, 205mm |
| Illumination uniformity | < 3% |
| Resist thickness | > c.a.1µm |
| Overlay alignment | < 1µm front side, manual alignment |
| Operation | Manual load/unload, automatic exposure |
PhableXTM for volume production, cassette operation
| Resolution | UV light source : 125 nm half pitch (linear gratings) DUV light source : 65 nm half pitch (linear gratings) |
|---|---|
| Substrate size | φ100 mm, φ150 mm, (φ200 mm on request) |
| Mask format | 5”□, 6”□ |
| Beam size | 105mm, 155mm, 205mm |
| Illumination uniformity | < 3% |
| Resist thickness | > c.a. 1µm |
| Overlay alignment | < 1µm front side, < 5µm backside |
| Operation | Cassette manual loading/unloading Automatic exposure Automatic operation (Optional) |
| Duty cycle control | Yes. (optional) |
PhableSTM for volume production, Step & Repeat
| Resolution | UV light source : 125 nm half pitch (linear gratings) DUV light source : 65 nm half pitch (linear gratings) |
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| Substrate size | φ300 mm (Larger size on request) |
| Mask format | 6”□ |
| Beam size | Blade exposure |
| Illumination uniformity | < 3% |
| Resist thickness | > c.a.1µm |
| Overlay alignment | < 1µm front side, < 5µm backside |
| Operation | Automatic handling for wafer and mask |
| Duty cycle control | Yes. (optional) |
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| 製品分類1 | Microfabrication Tools |
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| 製品分類2 | Nano-pattern exposure system |
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