Item	Film structure	Description
Th-OX	Thermally Oxidized single layer film	-
TEOS-OX	Plasma TEOS Oxidized single layer film	-
HDP-OX	HDP Oxidized single layer film	w/ heat treatment
Cu	Cu Plating Seed Cu (Sputtering) Ta Sputtering Thermally Oxidized film	8" notch type only w/ heat treatment
W	CVD W TiN (Sputtering) Plasma Oxidized film	-
TiN	TiN Sputtering Plasma Oxidized film	-
Ta	Ta (Sputtering) Thermally Oxidized film	-
TaN	TaN (Sputtering) Thermally Oxidized film	-
Poly-Si	LP, Poly-Si	-
LP-SiN	LP, Si3N4 single layer	-
PE-SiN	Plasma SiN single layer film	-
PE-SiO	Plasma SiOsingle layer film	-
PE-SiON	Poly-Si single layer film	-
Low-K	SIOC, SIC etc	-

Basically, available wafer size is 8 inch notch type and 6 inch orientation flat. However, feel free to ask for availabilities of other sizes The thickness of the film can vary, according to the client's needs. Also, a combination of the above listed film types can be considered upon request. Please, ask for patterning on the written above wafers, if necessary. Laser marking is available as an optional service. Please specify it, if necessary. Feel free to make a request of back grind and wafer thinning processing, if necessary.