The semiconductor photolithography/etching fabrication service, which is offered by Kyodo International, decreases the R&D costs, lessens the burden of the development speed. Our company has a positive attitude towards the development of the products. We use wet etching, Ion milling, and RIE technology, in order to answer your requests about circuit formation, test pattern manufacture, improvement of the surface, evaluation test, confirm conditions,etc. Nowadays, the needs for moat and nanoimprinting have grown: we can answer that need with our ICP and D-RIE technology. Furthermore, except thin film formation and etching, we support the micro-processing tehcnology in a very wide scope by offering many types of substrate, ashing process,exposure,etc.

	Wet etching and dry etching fabrication services are available.
	Dry etching: we deal with RIE, ICP and Deep RIE: Etching device specifications
	Scrifice layer etching is available (HF vapor etching): SEM pics
	We deal mainly with Si wafer,glass and some metal etching fabrication services available: SEM pics
	During the photolythography process, according to the specifications, contact stepper and EB can be chosen.
	We offer 3D pattern photolithography etching fabrication service by gray scale mask.
	Processing by Ion milling is available.

We meet your various requirements with abundant expertise and process.

Process Type Method, Apparatus Remarks Substrate size Thin film Insulator Formation Themal oxidation Thickness: <3 is possible 2" - 300 AP-CVD SiO2, PSG, NSG etc. 4", 5" LP-CVD Poly Si etc. 2"- 4", 6" PE-CVD SiO2, SiN etc. 2" - 8" Metal, Insulator Formation Sputtering (PVD) Metal, Alloy, Oxide, Nitride, Special material etc. 2" - 300, Square Evaporation Metal, Alloy, Oxide, Nitride, Special material etc. 2" - 300, Square Electro / Electroless Plating Electro plating: Ni, Cu, Au, SnAg Electroless plating:Ni, Cu, Au 6, 8" Patterning Photolithography Process (Resist coating, Exposure, Development) Spin Coat Positive resist, Negative resist 2" - 8" Contact Aligner Capability: >3 2" - 6" Duoble Side Aligner (g-line) Capability: >1 4" Stepper (i-line) Capability: >0.5 3", 4", 6", 8" Nanoimprinting Imprinted resist (nano order) Ask for detail E beam lithography Capability: >50nm 8" Lift off Lift off Capability: >5 2" - 6" Etching Dry Etching Parallel plate RIE Si etching, Quartz etching 2" - 8", Square ICP-RIE Si etching, Quartz etching 4", 6" Sacrificial etching Si, SiO2 2" - 6" Wet Etching TMAH, KOH Choose suitable 2" - 8" HF Various metal layer etching Bonding Wafer bonding Anodic bonding Bond Glass and Si 3" Surface activated bonding Bond various materials Ask for detail Polishing Wafer polishing CMP Metal: Au, P‚”, Cu etc. Oxide: TEOS, SiO2 etc. 2" - 300, Square

Etching device specifications

SEM pics

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