- KYODO INTERNATIONAL INC./Japan
- Electronics MEMS
- MEMS Total Solution
- CMP processing
CMP processing
Different from CMP process for IC, more variety of structures and materials are applied to MEMS devices. As for process, in addition to conventional damascene, STI and interlayer dielectric CMP, MEMS specific processed like "CMP before wafer bonding" and "SIP plug formation CMP" etc. are required.
Kyodo International offers total solution to CMP for MEMS by collaboration with D-Process with decent expertise and capability of relevant processes.
- Substrate Size : from Chip size to 300mm(Φ12")
* Square shaped substrate can be processed. - Substrate material : All material such as Si, Imide, Al2O3 etc.
- Distribution : Less than 2% (1θ)
Combine decent expertise and ability of total solution
- As well as metal such as Au, Ag, Al, Cu, Pt, Ni, Ni-Zn, Ta, TaN, Ti, TiN, Insulator such as TEOS, SiO2, PMMA, Imide or resin are applicable.
- We propose CMP process optimization to specific MEMS material or structure from slurry composition level.
- By adopting knowhow of relevant processes such as sputtering and etching, or by offering foundry service of such processes, we eliminate customers' risk and effort to outsource each process individually.
CMP processable materials
| Metal | Au, Ag, Al, Cu, Pt, Ni, Ni-Zn, Ta, TaN, Ti, TiN etc. |
|---|---|
| Insulator, Resin | TEOS, SiO2, PMMA, Imide etc. |
Example of polishing rate of horizonor for various materials
| nm/min | TEOS | Si、p-Si | Si3N4 | SiOC | Metal material (Al, Cu, Cr, Ni, etc) |
|---|---|---|---|---|---|
| horizonor | 250 | <1 | <1 | - | Rate optimization depend on application and structure is possible. |
| 200 | <1 | 180 | - | ||
| <1 | - 560 | <1 | - | ||
| 240 | 150 | 190 | 45 | ||
| <1 | <1 | <1 | 140 | ||
| 60 | <1 | <1 | 120 | ||
| Commercial slurry A | 200 | 50 | 210 | - | Not adjustable |
| Commercial slurry B | <20 | 500 | - | - | Not adjustable |
Slyrry lineup for Cu (example of horizonor)
| For MEMS | For Logic LSI | ||||
|---|---|---|---|---|---|
| Product Name | CSHR | CHR | CSD | CLD | |
| Cu polish rate (nm/min) | 5500 | 2000 | 1000 | 750 | |
| Cu static etching rate (nm/min) | 15 | 4 | 1 | <1 | |
| Dishing & erosion (nm) | 100µm line | 300 - 500 | 100 | 60 | 30 |
| 1µm line | 100 | 20 | 10 | <5 | |


